Tunable two-mirror interference lithography system
US8681315B2 · kind B2 · utility
3Cited by
1References
1Claims
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Key dates
| Filing date | Jul 12, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Jul 12, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70408
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A two-beam interference lithography system offers large-area nanopatterning with tunability of pattern periodicities. The tunable feature is achieved by placing two rotatable mirrors in the two expanded beam paths which can conveniently be regulated for the designed pattern periodicities. While the effective interference pattern coverage is mainly determined by the optical coherence length and mirror size, the minimum pattern coverage area is as large as the effective coherence length of the laser and the selected mirror size over a wide range of periodicities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.