Flash multiple-pass write with accurate first-pass write
US8681563B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2012 |
| Grant date | Mar 25, 2014 |
| Priority date | — |
| Expiry date | Sep 1, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/0411
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An indication to store a data value in Flash memory is received. An accurate coarse write is performed, including by storing a first voltage level in the Flash memory and setting a configuration setting to a first setting. The first voltage level, when interpreted using the configuration setting at the first setting, corresponds to the data value. A fine write is performed, including by storing a second voltage level in the Flash memory and setting the configuration setting of the Flash memory to a second setting. The second voltage level, when interpreted using the configuration setting at the second setting, corresponds to the data value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.