Sensing apparatus and method
US8685228B2 · kind B2 · utility
4Cited by
21References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2010 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Feb 1, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC12Q2565/607
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localized fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the ion sensitive field effect transistor, the localized fluctuations of ionic charge indicating events occurring during a chemical reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.