Method for depositing a thin-film polymer in a low-pressure gas phase
US8685500B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 14, 2009 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Nov 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber (8) along with a carrier gas by means of a gas inlet element (3) in order to deposit a thin layer, in particular in the form of a polymer, on the surface (7′) of a substrate (7) which lies on a supporting surface (4′) of a susceptor, said supporting surface (4′) lying opposite the gas inlet element (3), at a distance therefrom. In order to allow the coating process to be carried out at substrate temperatures that only slightly exceed the temperature of the supporting surface of the susceptor, the gas inlet element (3) and/or the supporting surface (4′) are/is temperature-controlled in such a way that the temperature (TS) of the supporting surface (4′) is lower than the temperature (TG) of the gas inlet element (3). More particularly, at a first pressure (P1) prevailing in the deposition chamber (8) before the process gas penetrates into the deposition chamber (8), the substrate (7) lying on the supporting surface (4′) is stabilized, by dissipating heat to the susceptor (4), to a substrate temperature (TD) that only slightly exce…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.