Method of manufacturing light emitting diode and light emitting diode manufactured thereby
US8685772B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2012 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Jan 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.