Secondary treatment of films of colloidal quantum dots for optoelectronics and devices produced thereby
US8685781B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2011 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Sep 27, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/543
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.