Nanowire tunneling field effect transistor with vertical structure and a manufacturing method thereof
US8685788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2012 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/86
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention belongs to the technical field of semiconductor devices and specifically relates to a method for manufacturing a nanowire tunneling field effect transistor (TFET). In the method, the ZnO nanowire required is developed in a water bath without the need for high temperatures and high pressure, featuring a simple solution preparation, convenient development and low cost, as well as constituting MOS devices of vertical structure with nanowire directly, thus omitting the nanowire treatment in the subsequent stage. The present invention has the advantages of simple structure, convenient manufacturing, and low cost, and control of the nanowire channel developed and the MOSFET array with vertical structure made of it though the gate, so as to facilitate the manufacturing of large-scale MOSFET array directly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.