Microelectronic device
US8686412B2 · kind B2 · utility
4Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Dec 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device includes a thin film transistor having an oxide semiconductor channel and an organic polymer passivation layer formed on the oxide semiconductor channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.