Semiconductor light emitting device
US8686454B2 · kind B2 · utility
4Cited by
4References
8Claims
0Family size
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Key dates
| Filing date | Oct 22, 2009 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Oct 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
Abstract
There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.