Semiconductor device with an image sensor and method for the manufacturing of such a device
US8686481B2 · kind B2 · utility
6Cited by
7References
5Claims
0Family size
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Key dates
| Filing date | Apr 26, 2006 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Apr 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
Disclosed are embodiments of a semiconductor device comprising a semiconductor body with a semiconductor image sensor comprising a two-dimensional matrix of picture elements, each picture element comprising a radiation-sensitive element coupled to MOS field effect transistors for reading the radiation-sensitive elements, wherein a semiconductor region is sunken in the surface of the body having the same conductivity type as the body and having an increased doping concentration, the semiconductor region being disposed between the radiation-sensitive elements of neighboring picture elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.