Charge transfer photosite

US8686483B2 · kind B2 · utility

Assignees

• STMicroelectronics SA
• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Julien Michelot · Grenoble, FR
• Francois Roy · Seyssinet-Pariset, FR
• Frederic Lalanne · Bernin, FR

Key dates

• Filing date: Feb 16, 2012
• Grant date: Apr 1, 2014
• Expiry date: Apr 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/813

Abstract

A photosite may include, in a semi-conductor substrate, a photodiode pinched in the direction of the depth of the substrate including a charge storage zone, and a charge transfer transistor to transfer the stored charge. The charge storage zone may include a pinching in a first direction passing through the charge transfer transistor defining a constriction zone adjacent to the charge transfer transistor.