Lateral semiconductor device and manufacturing method therefor

US8686505B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Marc Strasser · Munich, DE
• Karl-Heinz Gebhardt · Dresden, DE
• Ralf Rudolf · Dresden, DE
• Lincoln O'Riain · Dresden, DE

Key dates

• Filing date: Jul 27, 2012
• Grant date: Apr 1, 2014
• Expiry date: Jul 27, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A method produces a semiconductor device including a semiconductor body, an electrode thereon, and an insulating structure insulating the electrode from the semiconductor body. The semiconductor body includes a first contact region of a first conductivity type, a body region of a second conductivity type, a drift region of the first conductivity type, and a second contact region having a higher maximum doping concentration than the drift region. The insulating structure includes a gate dielectric portion forming a first horizontal interface. with the drift region and has a first maximum vertical extension A field dielectric portion forms with the drift region second and third horizontal interfaces arranged below the main surface. A second maximum vertical extension of the field dielectric portion is larger than the first maximum vertical extension. A third maximum vertical extension of the field dielectric portion is larger than the second maximum vertical extension.