Repairing method for pixel structure with repairable capacitor structures
US8687136B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2012 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Jun 13, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A repairing method for a pixel structure including an active device, a pixel electrode connected with the active device, a bottom electrode disposed under the pixel electrode, upper electrodes disposed between the pixel electrode and the bottom electrode and connected with the pixel electrode, a first dielectric layer disposed between the bottom electrode and the upper electrodes and a second dielectric layer disposed between the upper electrodes and the pixel electrode is provided. The repairing method includes removing a portion of the pixel electrode to electrically isolate the contact region over the upper electrode from the remaining portion of the pixel electrode, wherein a storage capacitor is formed by the reserved region over the upper electrode, the second dielectric layer and the remaining portion of the pixel electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.