Sense scheme for phase change material content addressable memory
US8687398B2 · kind B2 · utility
4Cited by
13References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2012 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Apr 6, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C15/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sensing circuit and method for sensing match lines in content addressable memory. The sensing circuit includes an inverter electrically coupled in a feedback loop to a match line. The inverter includes an inverting threshold of the match line. The match line is charged to substantially a first voltage threshold during a pre-charge phase. An evaluation phase occurs when the match line voltage drops from substantially the first voltage threshold to substantially the second voltage threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.