Method for manufacturing an electronic device including a light absorption layer
US8687469B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 7, 2012 |
| Grant date | Apr 1, 2014 |
| Priority date | — |
| Expiry date | Dec 7, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0021
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an electronic device includes a first bonding step of bonding an electronic component and a first member together via a first bonding layer and a second bonding step of bonding the first member and a second member together via a second bonding layer after the first bonding step. The second bonding layer includes a bonding material layer made of a bonding material. In the second bonding step, with the bonding material interposed between the first and second members before being bonded together, the bonding material is heated and melted using light traveling through the first member. The first member is made of Si. The light has a wavelength in the range of 1100 to 15000 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.