Method of manufacturing zinc oxide nanowires
US8691012B2 · kind B2 · utility
5Cited by
1References
9Claims
0Family size
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Key dates
| Filing date | Sep 24, 2008 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Feb 9, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing zinc oxide nanowires. A metal seed layer is formed on a substrate. The metal seed layer is thermally oxidized to form metal oxide crystals. Zinc oxide nanowires are grown on the metal oxide crystals serving as seeds for growth. The zinc oxide nanowires are aligned in one direction with respect to the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.