Stress adjustment in reactive sputtering
US8691057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2009 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Jul 3, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/54
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets having a coaxial (preferably frusto-conical) relationship to modify the distribution of ion and electron currents flowing from the plasma discharge to a substrate residing within a sputter chamber. A stress adjustment circuit is used to modify the ion bombardment of the growing films on the substrate resulting in a mechanism for control of the stress in the deposited films. In a preferred embodiment, the adjustment circuit comprises a variable resistor disposed between an internal shield that acts as a passive anode and a target. The value of the variable resistor influences the plasma discharge current distribution between the split sputter targets and the internal shields, and can effectively be used to adjust the properties of the deposited films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.