Patent · US Active

Sputter-enhanced evaporative deposition apparatus and method

US8691064B2 · kind B2 · utility

0Cited by

6References

17Claims

0Family size

Assignee

RAYTHEON CANADA LIMITED · CA

Inventors

Daniel B. Mitchell · Midland, CA
Geoffrey G. Harris · Midland, CA

Key dates

Filing date	Jul 9, 2007
Grant date	Apr 8, 2014
Priority date	—
Expiry date	Jun 9, 2031

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C14/46
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A deposition apparatus includes a deposition source that produces a deposition flow of a deposited material and has an evaporation source with a material to be deposited therein, and a sputtering source that produces sputtering ions directed at the material to be deposited in the evaporation source. A deposition target is in facing relationship to the deposition source. The sputtering source is operated simultaneously with the evaporation source.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.