Laminated structure for CIS based solar cell, and integrated structure and manufacturing method for CIS based thin-film solar cell
US8691619B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2008 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Dec 28, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500Ω·cm or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.