III-V nitride-based thermoelectric device
US8692105B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Apr 18, 2011 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Jan 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/855
Abstract
A method to suppress thermal conductivities of nitride films by using stacking faults and/or nano-scale In-composition fluctuation(s). Therefore, the present invention reduces thermal conductivity of nitride while keeping electrical conductivity high. In addition, In composition fluctuations can enhance the Seebeck coefficient through thermionic emission. The present invention further discloses a nitride based (e.g. GaN) thermoelectric lateral device with a short length.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.