Organic light emitting diode having co-deposited emission layer with host, emitting dopant and auxiliary dopant and method of fabricating the same
US8692232B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2009 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Jun 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2101/30
Abstract
Provided is an organic light emitting diode which can easily control color coordinates and improve a device's life span characteristic by using an auxiliary dopant having a higher band gap energy than that of a host, and preferably, having an absolute value of the highest occupied molecular orbital energy level equal to or higher than that of the host, or an absolute value of the lowest unoccupied molecular orbital energy level equal to or lower than that of the host.The organic light emitting diode includes a first electrode, an emission layer disposed on the first electrode and including a host, an emitting dopant and an auxiliary dopant, and a second electrode disposed on the emission layer. Here, the auxiliary dopant has a higher band gap energy than the host. A method of fabricating the organic light emitting diode is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.