Semiconductor device and method for manufacturing the same
US8692243B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2011 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Aug 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object is to reduce the number of manufacturing steps of a semiconductor device, to improve yield of a semiconductor device, or to reduce manufacturing cost of a semiconductor device. One embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes, over a substrate, a first transistor having a single crystal semiconductor layer in a channel formation region, a second transistor that is isolated from the first transistor with an insulating layer positioned therebetween and has an oxide semiconductor layer in a channel formation region, and a diode having a single crystal semiconductor layer and a oxide semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.