Thin-film transistor, method of producing the same, and devices provided with the same
US8692252B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2010 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Jan 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6757
Abstract
A thin-film transistor including an oxide semiconductor layer is disclosed. The oxide semiconductor layer includes a first area, a second area and a third area forming a well-type potential in the film-thickness direction. The first area forms a well of the well-type potential and has a first electron affinity. The second area is disposed nearer to the gate electrode than the first area and has a second electron affinity smaller than the first electron affinity. The third area is disposed farther from the gate electrode than the first area and has a third electron affinity smaller than the first electron affinity. At least an oxygen concentration at the third area is lower than an oxygen concentration at the first area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.