Fast turn on silicon controlled rectifiers for ESD protection
US8692289B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2012 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Jul 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/713
Abstract
Fast turn on silicon controlled rectifiers for ESD protection. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of a second conductivity type; a second well of the second conductivity type; a first diffused region of the first conductivity type and coupled to a first terminal; a first diffused region of the second conductivity type; a second diffused region of the first conductivity type; a second diffused region of the second conductivity type in the second well; wherein the first diffused region of the first conductivity type and the first diffused region of the second conductivity type form a first diode, and the second diffused region of the first conductivity type and the second diffused region of the second conductivity type form a second diode, and the first and second diodes are series coupled between the first terminal and the second terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.