Transistor with InGaAsP collector region and integrated opto-electronic devices employing same
US8692295B1 · kind B1 · utility
0Cited by
7References
19Claims
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Key dates
| Filing date | Sep 25, 2009 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Mar 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/245
Abstract
A double heterojunction bipolar transistor on a substrate comprises a collector formed of InGaAsP, a base in contact with the collector, an emitter in contact with the base, and electrodes forming separate electrical contacts with each of the collector, base, and emitter, respectively. A device incorporates this transistor and an opto-electronic device optically coupled with the collector of the transistor to interact with light transmitted therethrough.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.