Non-volatile memory device and method for programming the device, and memory system
US8693247B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2013 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Jun 17, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory device comprises a memory cell array comprising memory cells arranged in rows connected to corresponding word lines and columns connected to corresponding bit lines, a page buffer that stores a program data, a read-write circuit that programs and re-programs the program data into selected memory cells of the memory cell array and reads stored data from the programmed memory cells, and a control circuit that controls the page buffer and the read-write circuit to program the selected memory cells by loaded the program data from in page buffer and to re-program the selected memory cells by re-loaded the program data in the page buffer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.