Determining optimal read reference and programming voltages for non-volatile memory using mutual information
US8693257B2 · kind B2 · utility
15Cited by
27References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 18, 2011 |
| Grant date | Apr 8, 2014 |
| Priority date | — |
| Expiry date | Jul 13, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Approaches for operating a memory device comprising memory cells are disclosed. Optimal values for one or more of programming voltages used to program memory cells of the memory device and read reference voltages used to read the memory cells are determined using a mutual information function, I(X; Y), where X represents data values programmed to the memory cells and Y represents data values read from the memory cells. The read reference and/or programming voltages used for reading and/or programming the memory cells are adjusted using the optimal values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.