Method of forming a silicon carbide material, and structures including the material
US8697024B2 · kind B2 · utility
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13References
17Claims
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Key dates
| Filing date | Dec 18, 2009 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | May 26, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S376/904
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A precursor formulation of a silicon carbide material that includes a ceramic material and a boron-11 compound. The ceramic material may include silicon and carbon and, optionally, oxygen, nitrogen, titanium, zirconium, aluminum, or mixtures thereof. The boron-11 compound may be a boron-11 isotope of boron oxide, boron hydride, boron hydroxide, boron carbide, boron nitride, boron trichloride, boron trifluoride, boron metal, or mixtures thereof. A material for use in a nuclear reactor component is also disclosed, as are such components, as well as a method of producing the material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.