Method for manufacturing a mask having submillimetric apertures for a submillimetric electrically conductive grid, and mask and submillimetric electrically conductive grid
US8697186B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2009 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Dec 22, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24273
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a first solution of colloidal nanoparticles in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer, known as the first masking layer, is carried out at a temperature below said temperature Tg until a mask having a two-dimensional network of substantially straight-edged submillimetric openings, that defines a mask zone known as a network mask zone is obtained, a solid mask zone is formed by a liquid deposition, on the face, of a second masking zone, the solid mask zone being adjacent to and in contact with the network mask zone, and/or at least one cover zone is formed, the cover zone being in contact with the network mask zone, and/or after the drying of the first masking layer, a filled mask zone is formed by filling, via a liquid route, openings of a portion of the network mask zone. The invention also relates to the mask and the electroconductive grid obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.