Method for manufacturing junction plane of solar cell through aluminum induced crystallization method
US8697482B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Dec 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a junction plane of a solar cell through an aluminum induced crystallization method includes steps of: providing a substrate; forming an aluminum film layer on a surface of a first growth area on a back side of the substrate; forming an N-type amorphous silicon layer on a surface of the aluminum film layer and a surface of a second growth area on the back side of the substrate; performing a thermal treatment to allow aluminum to induce the N-type amorphous silicon layer to crystallize and form a P-type polycrystalline silicon layer, such that positions of the aluminum film layer and the P-type polycrystalline silicon layer are switched due to the thermal treatment to allow the P-type polycrystalline silicon layer to be formed between the aluminum film layer and the substrate to form a PN junction plane with the N-type amorphous silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.