Heterostructure device and associated method

US8697506B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Vinayak Tilak · Clifton Park, US
• Alexei Vertiatchikh · Niskayuna, US
• Kevin Sean Matocha · Rexford, US
• Peter Micah Sandvik · Guilderland, US
• Siddharth Rajan · Columbus, US

Key dates

• Filing date: Mar 13, 2012
• Grant date: Apr 15, 2014
• Expiry date: Mar 13, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A method of manufacturing a heterostructure device is provided that includes implantation of ions into a portion of a surface of a multi-layer structure. Iodine ions are implanted between a first region and a second region to form a third region. A charge is depleted from the two dimensional electron gas (2DEG) channel in the third region to form a reversibly electrically non-conductive pathway from the first region to the second region. On applying a voltage potential to a gate electrode proximate to the third region allows electrical current to flow from the first region to the second region.