Method of forming an isolation structure and method of forming a semiconductor device
US8697579B2 · kind B2 · utility
3Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jul 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an isolation structure includes forming a trench at an upper portion of a substrate, forming a first oxide layer on an inner wall of the trench, oxidizing a portion of the substrate adjacent to the trench to form a second oxide layer such that the portion of the substrate adjacent to the trench has the first oxide layer thereon, forming a nitride layer on the first oxide layer, and forming an insulation layer pattern on the nitride layer such that the insulation layer pattern fills a remaining portion of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.