Semiconductor MOS entrance window for radiation detectors
US8698091B2 · kind B2 · utility
1Cited by
7References
22Claims
0Family size
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Key dates
| Filing date | Dec 14, 2011 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jun 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/189
Abstract
A semiconductor detector device, such as a PIN diode or silicon drift detector, including a substrate with an entrance window. The entrance window comprises a conductive layer, and an insulating layer disposed between the conductive layer and the substrate. The insulating layer and conductive layer cover a center portion of the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.