Heterojunction oxide non-volatile memory device
US8698120B2 · kind B2 · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 14, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Feb 14, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes a first metal layer and a first metal oxide layer coupled to the first metal layer. The memory device includes a second metal oxide layer coupled to the first metal oxide layer and a second metal layer coupled to the second metal oxide layer. The formation of the first metal oxide layer has a Gibbs free energy that is lower than the Gibbs free energy for the formation of the second metal oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.