Silicon nanowire comprising high density metal nanoclusters and method of preparing the same
US8698122B2 · kind B2 · utility
2Cited by
3References
16Claims
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Key dates
| Filing date | Oct 3, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Oct 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/43
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon nanowire including metal nanoclusters formed on a surface thereof at a high density. The metal nanocluster improves electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.