Organic semiconductor element, method of manufacturing organic semiconductor element, electronic device, electronic equipment and insulating layer forming composition
US8698142B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2009 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Jan 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/464
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention provides an organic semiconductor element which has a low hygroscopic property and whose property is hardly deteriorated with time and an electronic device and electronic equipment each provided with such an organic semiconductor element and having high reliability. The organic semiconductor element of the present invention includes: a source electrode 20a; a drain electrode 20b; a gate electrode 50; a gate insulating layer 40; an organic semiconductor layer 30; and a buffer layer (another insulating layer) 60, wherein at least one of the gate insulating layer 40 and the buffer layer 60 contains an insulating polymer with a main chain having both end portions and including repeating units represented by the following general formula (1) or (2):
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.