Gallium nitride based semiconductor devices and methods of manufacturing the same
US8698162B2 · kind B2 · utility
12Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2011 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Oct 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a Schottky electrode arranged on the GaN-based multi-layer. The HFET device may include a gate having a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.