Patent · US Active

Gallium nitride for liquid crystal electrodes

US8698200B2 · kind B2 · utility

0Cited by
12References
11Claims
0Family size

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Key dates

Filing dateAug 10, 2012
Grant dateApr 15, 2014
Priority date—
Expiry dateAug 10, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/8503
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium flouride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.