Photodetector having a very thin semiconducting region

US8698207B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Jérôme Le Perchec · Grenoble, FR
• Yohan Desieres · Le Pont-de-Claix, FR

Key dates

• Filing date: Dec 14, 2009
• Grant date: Apr 15, 2014
• Expiry date: Dec 14, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/206

Abstract

The instant disclosure describes a photodetector that includes at least one portion of a semiconducting layer formed directly on at least a portion of a reflective layer and to be illuminated with a light beam, at least one pad being formed on the portion of the semiconducting layer opposite the reflective layer portion, wherein the pad and the reflective layer portion are made of a metal or of a negative permittivity material, the optical cavity formed between said at least one reflective layer portion and said at least one pad has a thickness strictly lower than a quarter of the ratio of the light beam wavelength to the optical index of the semiconducting layer, and typically representing about one tenth of said ratio.