Photoelectric conversion device
US8698208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2012 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Apr 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/806
Abstract
A manufacturing method of a photoelectric conversion device comprises a first step of forming a gate electrode, a second step of forming a semiconductor region of a first conductivity type, a third step of forming an insulation film, and a fourth step of forming a protection region of a second conductivity type, which is the opposite conductivity type to the first conductivity type, by implanting ions in the semiconductor region using the gate electrode of the transfer transistor and a portion covering a side face of the gate electrode of the transfer transistor of the insulation film as a mask in a state in which the semiconductor substrate and the gate electrode of the transfer transistor are covered by the insulation film, and causing a portion of the semiconductor region of the first conductivity type from which the protection region is removed to be the charge accumulation region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.