Germanium photodetector and method of fabricating the same
US8698271B2 · kind B2 · utility
14Cited by
9References
16Claims
0Family size
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Key dates
| Filing date | Mar 13, 2009 |
| Grant date | Apr 15, 2014 |
| Priority date | — |
| Expiry date | Feb 18, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.