Positive resist composition and patterning process
US8703384B2 · kind B2 · utility
6Cited by
22References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 23, 2011 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Apr 4, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2041
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive resist composition comprising (A) a polymer comprising recurring units of a specific structure adapted to generate an acid in response to high-energy radiation and acid labile units, the polymer having an alkali solubility that increases under the action of an acid, and (B) a sulfonium salt of a specific structure exhibits a high resolution in forming fine size patterns, typically trench patterns and hole patterns. Lithographic properties of profile, DOF and roughness are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.