Patent · US Active

Method of manufacturing of a semi-conductor element and semi-conductor element

US8703587B2 · kind B2 · utility

1Cited by

1References

6Claims

0Family size

Assignee

Technische Universitaet Braunschweig Carolo-Wilhelmina · DE

Inventors

Andreas Waag · Würzburg, DE
Xue Wang · Beijing, CN
Shunfeng Li · Braunschweig, DE

Key dates

Filing date	Jul 13, 2012
Grant date	Apr 22, 2014
Priority date	—
Expiry date	Aug 6, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/821
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing of a semi-conductor element, comprising the following steps: providing a substrate, the substrate having a surface, the surface being partially coated with a coating and having at least one uncoated area, and growing a truncated pyramid of gallium nitride on the uncoated area, wherein the method comprises the following step: growing at least one gallium nitride column on the truncated pyramid.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.