Patent · US Active

Method for fabricating black silicon by using plasma immersion ion implantation

US8703591B2 · kind B2 · utility

1Cited by

0References

31Claims

0Family size

Assignee

INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

Yang Xia · Beijing, CN
Bangwu Liu · Beijing, CN
Chaobo Li · Beijing, CN
Jie Liu · Beijing, CN
Minggang Wang · Beijing, CN
Yongtao Li · Liuzhou, CN

Key dates

Filing date	Jul 26, 2010
Grant date	Apr 22, 2014
Priority date	—
Expiry date	Jul 26, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method for fabricating black silicon by using plasma immersion ion implantation is provided, which includes: putting a silicon wafer into a chamber of a black silicon fabrication apparatus; adjusting processing parameters of the black silicon fabrication apparatus to preset scales; generating plasmas in the chamber of the black silicon fabrication apparatus; implanting reactive ions among the plasmas into the silicon wafer, and forming the black silicon by means of the reaction of the reactive ions and the silicon wafer. The method can form the black silicon which has a strong light absorption property and is sensitive to light, and has advantages of high productivity, low cost and simple production process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.