Metal organic chemical vapor deposition apparatus and method
US8703614B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 17, 2012 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Dec 17, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/403
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A metal organic chemical vapor deposition apparatus includes reaction chambers in which nitride layers is deposited on a substrate using a group III-V material, a buffer chamber connected to the reaction chambers and in which a transfer robot is disposed to transfer the substrate into the reaction chambers, a gas supply device configured to selectively supply one or more of hydrogen, nitrogen, and ammonia gases into the buffer chamber so that when the buffer chamber communicates with one of the reaction chambers, the buffer chamber has the same atmosphere as an atmosphere of the reaction chamber, and a heater disposed in the buffer chamber. Nitride layers are deposited on a substrate in the reaction chambers, and the temperature and gas atmosphere of the buffer chamber are adjusted such that when the substrate is transferred, epitaxial layers formed on the substrate can be stably maintained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.