Multiple-junction photoelectric device and its production process

US8704084B2 · kind B2 · utility

Assignee

• Universite de Neuchatel · CH

Inventors

• Thomas Söderström · Stuvsta-Snättringe, SE
• Franz-Joseph Haug
• Xavier Niquille · Neuchâtel, CH

Key dates

• Filing date: Nov 18, 2009
• Grant date: Apr 22, 2014
• Expiry date: Oct 24, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A multiple-junction photoelectric device includes a substrate on which a first conducting layer is deposited, at least two elementary photoelectric devices of n-i-p or n-p configuration, on which a second conducting layer is deposited, and at least one intermediate layer between two adjacent elementary photoelectric devices. The intermediate layer has, on the incoming light side, top and bottom faces, the latter having a peak-valley roughness >150 nm, the top and bottom faces having respectively a surface morphology including inclined elementary surfaces so α90bottom<α90top by at least 3; where α90top is the angle for which 90% of the elementary surfaces of the top face of the intermediate layer have an inclination ≦this angle, and α90bottom is the angle for which 90% of the elementary surfaces of the surface of the bottom face of the intermediate layer have an inclination ≦this angle.