Active device

US8704220B2 · kind B2 · utility

Assignee

• Au Optronics Corporation · TW

Inventors

• Hao-Lin Chiu · Taipei, TW
• Chi-Jui Lin · Taoyuan, TW
• Shu-Wei Tsao · Taipei, TW
• Chun-Nan Lin
• Po-Liang Yeh · New Taipei, TW
• Shine-Kai Tseng · Daxi District, TW

Key dates

• Filing date: Apr 12, 2012
• Grant date: Apr 22, 2014
• Expiry date: Apr 12, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6755

Abstract

An active device including a source, a drain, an oxide semiconductor layer, a gate and a gate insulator layer is provided. The source includes first stripe electrodes parallel to each other and a first connection electrode connected thereto. The drain includes second stripe electrodes parallel to each other and a second connection electrode connected thereto, wherein the first stripe electrodes and the second stripe electrodes are parallel to each other, electrically isolated, and alternately arranged, and a zigzag trench is formed therebetween. The gate extends along the zigzag trench. The oxide semiconductor layer is in contact with the source and drain, wherein a contact area among the oxide semiconductor layer and each first stripe electrodes substantially equals to a layout area of each first stripe electrodes and a contact area among each second stripe electrodes substantially equals to a layout area of each second stripe electrodes.