Semiconductor device and method for manufacturing the same, and amplifier

US8704273B2 · kind B2 · utility

Assignee

• FUJITSU LIMITED · JP

Inventors

• Naoya Okamoto · Yokohama, JP
• Atsushi Yamada · Yokohama, JP

Key dates

• Filing date: Jun 3, 2010
• Grant date: Apr 22, 2014
• Expiry date: May 17, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/254

Abstract

A semiconductor device includes a nitride semiconductor layer having a (0001) face and a (000-1) face, formed above a common substrate; a (0001) face forming layer provided partially between the substrate and the nitride semiconductor layer; a source electrode, a drain electrode, and a gate electrode, provided on the nitride semiconductor layer having the (0001) face; and a hole extracting electrode provided on the nitride semiconductor layer having the (000-1) face.