High voltage devices and methods of forming the high voltage devices
US8704312B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2010 |
| Grant date | Apr 22, 2014 |
| Priority date | — |
| Expiry date | Feb 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage (HV) device includes a well region of a first dopant type disposed in a substrate. A first well region of a second dopant type is disposed in the well region of the first dopant type. An isolation structure is at least partially disposed in the well region of the first dopant type. A first gate electrode is disposed over the isolation structure and the first well region of the second dopant type. A second well region of the second dopant type is disposed in the well region of the first dopant type. The second well region of the second dopant type is spaced from the first well region of the second dopant type. A second gate electrode is disposed between and over the first well region of the second dopant type and the second well region of the second dopant type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.