Patent · US Active

CMOS integrated micromechanical resonators and methods for fabricating the same

US8704315B2 · kind B2 · utility

1Cited by
6References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 26, 2009
Grant dateApr 22, 2014
Priority date
Expiry dateNov 24, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49007
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The present invention is directed to a CMOS integrated micromechanical device fabricated in accordance with a standard CMOS foundry fabrication process. The standard CMOS foundry fabrication process is characterized by a predetermined layer map and a predetermined set of fabrication rules. The device includes a semiconductor substrate formed or provided in accordance with the predetermined layer map and the predetermined set of fabrication rules. A MEMS resonator device is fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules. The MEMS resonator device includes a micromechanical resonator structure having a surface area greater than or equal to approximately 20 square microns. At least one CMOS circuit is coupled to the MEMS resonator member. The at least one CMOS circuit is also fabricated in accordance with the predetermined layer map and the predetermined set of fabrication rules.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.